A 6-ns 256-kb BiCMOS TTL SRAM. - Takashi Akioka; Atsushi Hiraishi; Tatsumi Yamauchi; Yuji Yokoyama; Shigeru Takahashi; Masahiro Iwamura; Yutaka Kobayashi; Akira Ide; Nobuyuki Gotou; Kazunori Onozawa; Hideaki Uchida (IEEE J. Solid State Circuits, 1991)

Memory circuits and technology. - Takashi Akioka; Jean-Christophe Vial (CICC, 2005)

Spreading Diversity in Multi-cell Neutron-Induced Upsets with Device Scaling. - Eishi Ibe; S. S. Chung; ShiJie Wen; Hironaru Yamaguchi; Yasuo Yahagi; Hideaki Kameyama; Shigehisa Yamamoto; Takashi Akioka (CICC, 2006)