A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read scheme. - Hiraki Koike; Tetsuya Otsuki; Tohru Kimura; Masao Fukuma; Yoshihiro Hayashi; Yukihiko Maejima; Kazushi Amanuma; Nobuhira Tanabe; Takeo Matsuki; Shinobu Saito; Tsuneo Takeuchi; Souta Kobayashi; et al. (IEEE J. Solid State Circuits, 1996)

Low-power embedded ReRAM technology for IoT applications. - Makoto Ueki; K. Takeuchi; T. Yamamoto; Akira Tanabe; N. Ikarashi; M. Saitoh; T. Nagumo; Hiroshi Sunamura; Mitsuru Narihiro; Kazuya Uejima; Koji Masuzaki; Naoya Furutake; et al. (VLSIC, 2015)