A 40-ps high electron mobility transistor 4.1 K gate array. - Kiyoshi Kajii; Yuu Watanabe; Masahisa Suzuki; Isamu Hanyu; Makoto Kosugi; Kouichiro Odani; Takashi Mimura; Masayuki Abe (IEEE J. Solid State Circuits, 1988)

Ultrahigh-speed HEMT LSI technology for supercomputer. - Masayuki Abe; Takashi Mimura (IEEE J. Solid State Circuits, 1991)

A 45 K-gate HEMT array with 35-ps DCFL and 50-ps BDCFL gates. - Seishi Notomi; Yuu Watanabe; Makoto Kosugi; Isamu Hanyu; Masahisa Suzuki; Takashi Mimura; Masayuki Abe (IEEE J. Solid State Circuits, 1991)

A 1.2-ns HEMT 64-kb SRAM. - Masahisa Suzuki; Seishi Notomi; Masaaki Ono; Naoki Kobayashi; Eizo Mitani; Kouichiro Odani; Takashi Mimura; Masayuki Abe (IEEE J. Solid State Circuits, 1991)

Development of High-Frequency GaN HFETs for Millimeter-Wave Applications. - Masataka Higashiwaki; Takashi Mimura; Toshiaki Matsui (IEICE Trans. Electron., 2008)

E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology. - Issei Watanabe; Akira Endoh; Takashi Mimura; Toshiaki Matsui (IEICE Trans. Electron., 2010)