Tokyo Institute of Technology, Department of Control Engineering, Hasegawa Laboratory. - Kensuke Hasegawa; Takashi Mizutani (Adv. Robotics, 1986)

Controlling high-frequency chaos in resonant tunneling chaos generator circuits. - Koichi Maezawa; Yoshihiro Komoto; Shigeru Kishimoto; Takashi Mizutani; Misao Takakusaki; Hirofumi Nakata (IEICE Electron. Express, 2005)

Dual-clock MASH delta-sigma modulator employing a frequency modulated intermediate signal. - Koichi Maezawa; Mario Sakou; Wataru Matsubara; Takashi Mizutani (IEICE Electron. Express, 2006)

Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation. - Youhei Ookawa; Shigeru Kishimoto; Koichi Maezawa; Takashi Mizutani (IEICE Trans. Electron., 2006)

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer. - Masafumi Ito; Shigeru Kishimoto; Fumihiko Nakamura; Takashi Mizutani (IEICE Trans. Electron., 2008)

A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch. - Koichi Maezawa; Ikuo Soga; Shigeru Kishimoto; Takashi Mizutani; Kazuhiro Akamatsu (IEICE Trans. Electron., 2008)

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide. - Shun Sugiura; Shigeru Kishimoto; Takashi Mizutani; Masayuki Kuroda; Tetsuzo Ueda; Tsuyoshi Tanaka (IEICE Trans. Electron., 2008)

Carbon Nanotubes for VLSI: Interconnect and Transistor Applications. - Yuji Awano; Shintaro Sato; Mizuhisa Nihei; Tadashi Sakai; Yutaka Ohno; Takashi Mizutani (Proc. IEEE, 2010)

Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs. - Eiji Miyazaki; Shigeru Kishimoto; Takashi Mizutani (IEICE Trans. Electron., 2012)