A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning. - Masahisa Iida; Naoki Kuroda; Hidefumi Otsuka; Masanobu Hirose; Yuji Yamasaki; Kiyoto Ohta; Kazuhiko Shimakawa; Takashi Nakabayashi; Hiroyuki Yamauchi; Tomohiko Sano; Takayuki Gyohten; Masanao Maruta; et al. (IEEE J. Solid State Circuits, 2005)

A compact low-power 224-Gb/s DP-16QAM modulator module with InP-based modulator and linear driver ICs. - Taizo Tatsumi; Naoki Itabashi; Tomoko Ikagawa; Naoya Kono; Morihiro Seki; Keiji Tanaka; Kazuhiro Yamaji; Yasushi Fujimura; Katsumi Uesaka; Takashi Nakabayashi; Hajime Shoji; Shoichi Ogita (OFC, 2014)

Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests. - Yasunori Tateno; Yasuyo Kurachi; Hiroshi Yamamoto; Takashi Nakabayashi (IRPS, 2018)