Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation. - Kazuhiro Mochizuki; Ken-ichi Tanaka; Takashi Shiota; Takafumi Taniguchi; Hiroyuki Uchiyama (IEICE Trans. Electron., 2006)

High-Speed EA-DFB Laser for 40-G and 100-Gbps. - Shigeki Makino; Kazunori Shinoda; Takeshi Kitatani; Hiroaki Hayashi; Takashi Shiota; Shigehisa Tanaka; Masahiro Aoki; Noriko Sasada; Kazuhiko Naoe (IEICE Trans. Electron., 2009)

A concentrated springs architecture for single-digit frequency symmetry in Si MEMS gyroscope. - Joan Giner; Yuhua Zhang; Takashi Shiota; Daisuke Maeda; Kazuo Ono; Shinya Kajiyama; Takashi Oshima; Taizo Yamawaki; Tomonori Sekiguchi (IEEE SENSORS, 2016)