A 12-ps-resolution digital variable-delay macro cell on GaAs 100 K-gates gate array using a meshed air bridge structure. - Akira Ohta; Norio Higashisaka; Tetsuya Heima; Takayuki Hisaka; Hirofumi Nakano; Ryuji Ohmura; Tadashi Takagi; Noriyuki Tanino (IEEE J. Solid State Circuits, 1999)

Degradation mechanisms of GaAs PHEMTs in high humidity conditions. - Takayuki Hisaka; Yasuki Aihara; Yoichi Nogami; Hajime Sasaki; Yasushi Uehara; Naohito Yoshida; Kazuo Hayashi (Microelectron. Reliab., 2005)

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions. - Takayuki Hisaka; Hajime Sasaki; Yoichi Nogami; Kenji Hosogi; Naohito Yoshida; Anita A. Villanueva; Jesús A. del Alamo; Shigehiko Hasegawa; Hajime Asahi (Microelectron. Reliab., 2009)

Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC. - Takayuki Hisaka; Hajime Sasaki; Takayuki Kato; Ko Kanaya; Naohito Yoshida; Anita A. Villanueva; Jesús A. del Alamo (IEICE Electron. Express, 2010)

Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy. - Hajime Sasaki; Takayuki Hisaka; Kaoru Kadoiwa; Yoshikazu Terai; Yasufumi Fujiwara (IEICE Electron. Express, 2012)

Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. - Hajime Sasaki; Takayuki Hisaka; Kaoru Kadoiwa; Tomoki Oku; Shinobu Onoda; Takeshi Ohshima; Eiji Taguchi; Hidehiro Yasuda (Microelectron. Reliab., 2018)