Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. - Jin-Aun Ng; Nobuyuki Sugii; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Takeo Hattori; Hiroshi Iwai (IEICE Electron. Express, 2006)

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. - Joel Molina Reyes; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (IEICE Electron. Express, 2007)

Angle-resolved photoelectron spectroscopy on gate insulators. - Takeo Hattori; Hiroshi Nohira; S. Shinagawa; M. Hori; M. Kase; T. Maruizumi (Microelectron. Reliab., 2007)

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. - Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2008)

SrO capping effect for La2O3/Ce-silicate gate dielectrics. - Kuniyuki Kakushima; K. Okamoto; T. Koyanagi; M. Kouda; Kiichi Tachi; Takamasa Kawanago; J. Song; Parhat Ahmet; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; et al. (Microelectron. Reliab., 2010)

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. - Kuniyuki Kakushima; Kiichi Tachi; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2010)

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. - D. Zade; Soshi Sato; Kuniyuki Kakushima; A. Srivastava; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Chandan Kumar Sarkar; Hiroshi Iwai (Microelectron. Reliab., 2011)

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. - Takamasa Kawanago; Kuniyuki Kakushima; Parhat Ahmet; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kazuo Tsutsui; Kenji Natori; Takeo Hattori; Hiroshi Iwai (ESSDERC, 2012)

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. - Chunmeng Dou; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2012)

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. - M. Mamatrishat; T. Kubota; T. Seki; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2012)