A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read scheme. - Hiraki Koike; Tetsuya Otsuki; Tohru Kimura; Masao Fukuma; Yoshihiro Hayashi; Yukihiko Maejima; Kazushi Amanuma; Nobuhira Tanabe; Takeo Matsuki; Shinobu Saito; Tsuneo Takeuchi; Souta Kobayashi; et al. (IEEE J. Solid State Circuits, 1996)

Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs. - Takeo Matsuki; Kazuyoshi Torii; Takeshi Maeda; Yasushi Akasaka; Kiyoshi Hayashi; Naoki Kasai; Tsunetoshi Arikado (IEICE Trans. Electron., 2005)