A circuit technology for sub-10-ns ECL 4-Mb BiCMOS DRAM's. - Takayuki Kawahara; Yoshiki Kawajiri; Goro Kitsukawa; Yoshinobu Nakagome; Kazuhiko Sagara; Yoshifumi Kawamoto; Takesada Akiba; Shisei Kato; Yasushi Kawase; Kiyoo Itoh 001 (IEEE J. Solid State Circuits, 1991)

Deep-submicrometer BiCMOS circuit technology for sub-10-ns ECL 4-Mb DRAM's. - Takayuki Kawahara; Yoshiki Kawajiri; Goro Kitsukawa; Kazuhiko Sagara; Yoshifumi Kawamoto; Takesada Akiba; Shisei Kato; Yasushi Kawase; Kiyoo Itoh 001 (IEEE J. Solid State Circuits, 1992)

A high-speed, small-area, threshold-voltage-mismatch compensation sense amplifier for gigabit-scale DRAM arrays. - Takayuki Kawahara; Takeshi Sakata; Kiyoo Itoh 001; Yoshiki Kawajiri; Takesada Akiba; Goro Kitsukawa; Masakazu Aoki (IEEE J. Solid State Circuits, 1993)

256-Mb DRAM circuit technologies for file applications. - Goro Kitsukawa; Masashi Horiguchi; Yoshiki Kawajiri; Takayuki Kawahara; Takesada Akiba; Yasushi Kawase; Toshikazu Tachibana; Takeshi Sakai; Masakazu Aoki; Syoji Shukuri; Kazuhiko Sagara; Ryo Nagai; et al. (IEEE J. Solid State Circuits, 1993)

A charge recycle refresh for Gb-scale DRAM's in file applications. - Takayulu Kawahara; Yoshiki Kawajiri; Masashi Horiguchi; Takesada Akiba; Goro Kitsukawa; Tokuo Kure; Masakazu Aoki (IEEE J. Solid State Circuits, 1994)

A 29-ns 64-Mb DRAM with hierarchical array architecture. - Masayuki Nakamura; Tugio Takahashi; Takesada Akiba; Goro Kitsukawa; Makoto Morino; Toshihiro Sekiguchi; Isamu Asano; Katsuo Komatsuzaki; Yoshitaka Tadaki; Songsu Cho; Kazuhiko Kajigaya; Tadashi Tachibana; et al. (IEEE J. Solid State Circuits, 1996)