A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes. - Hidehiro Shiga; Daisaburo Takashima; Shinichiro Shiratake; Katsuhiko Hoya; Tadashi Miyakawa; Ryu Ogiwara; Ryo Fukuda; Ryosuke Takizawa; Kosuke Hatsuda; Fumiyoshi Matsuoka; Yasushi Nagadomi; Daisuke Hashimoto; et al. (ISSCC, 2009)

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes. - Hidehiro Shiga; Daisaburo Takashima; Shinichiro Shiratake; Katsuhiko Hoya; Tadashi Miyakawa; Ryu Ogiwara; Ryo Fukuda; Ryosuke Takizawa; Kosuke Hatsuda; Fumiyoshi Matsuoka; Yasushi Nagadomi; Daisuke Hashimoto; et al. (IEEE J. Solid State Circuits, 2010)

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. - Tsutomu Higuchi; Takuyo Kodama; Koji Kato; Ryo Fukuda; Naoya Tokiwa; Mitsuhiro Abe; Teruo Takagiwa; Yuki Shimizu; Junji Musha; Katsuaki Sakurai; Jumpei Sato; Tetsuaki Utsumi; et al. (ISSCC, 2021)

A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os. - Kosuke Yanagidaira; Mario Sako; Yasuhiro Hirashima; Junya Matsuno; Yumi Higashi; Yutaka Shimizu; Akihiro Imamoto; Kazuaki Kawaguchi; Koji Tabata; Takeshi Nakano; Yusuke Ochi; Hiroaki Hoshino; et al. (ISSCC, 2025)