A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential. - Dondee Navarro; Takeshi Mizoguchi; Masami Suetake; Kazuya Hisamitsu; Hiroaki Ueno; Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Shigetaka Kumashiro; Tetsuya Yamaguchi; Kyoji Yamashita; Noriaki Nakayama (IEICE Trans. Electron., 2005)

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications. - Takeshi Mizoguchi; Toshiyuki Naka; Yuta Tanimoto; Yasuhiro Okada; Wataru Saito; Mitiko Miura-Mattausch; Hans Jürgen Mattausch (IEICE Trans. Electron., 2017)

Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching. - Hideyuki Kikuchihara; Mitiko Miura-Mattausch; Takeshi Mizoguchi; Hajime Nagase; Makoto Hashimoto; Yusuke Kawaguchi; Hans Jürgen Mattausch (ISDCS, 2021)