56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes. - Masahiro Nada; Takuya Hoshi; Shigeru Kanazawa; Toshikazu Hashimoto; Hideaki Matsuzaki (OFC, 2016)

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage. - Norihide Kashio; Takuya Hoshi; Kenji Kurishima; Minoru Ida; Hideaki Matsuzaki (IEICE Trans. Electron., 2016)

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage. - Takuya Hoshi; Norihide Kashio; Yuta Shiratori; Kenji Kurishima; Minoru Ida; Hideaki Matsuzaki (IEICE Electron. Express, 2019)

Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate. - Yuta Shiratori; Takuya Hoshi; Hideaki Matsuzaki (BCICTS, 2020)