Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs. - Toshiro Hiramoto; Anil Kumar; Tomoko Mizutani; Jun Nishimura; Takuya Saraya (CICC, 2011)

NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM. - Nurul Ezaila Alias; Anil Kumar; Takuya Saraya; Shinji Miyano; Toshiro Hiramoto (IEICE Trans. Electron., 2013)

Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress. - Toshiro Hiramoto; Anil Kumar; Takuya Saraya; Shinji Miyano (IEICE Trans. Electron., 2013)

Three-dimensional integrated circuits and stacked CMOS image sensors using direct bonding of SOI layers. - Masahide Goto; Kei Hagiwara; Yoshinori Iguchi; Hiroshi Ohtake; Takuya Saraya; Masaharu Kobayashi; Eiji Higurashi; Hiroshi Toshiyoshi; Toshiro Hiramoto (3DIC, 2015)

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). - Kazuo Tsutsui; Kuniyuki Kakushima; Takuya Hoshii; A. Nakajima; Shinichi Nishizawa; Hitoshi Wakabayashi; Iriya Muneta; K. Sato; Tomoko Matsudai; Wataru Saito; Takuya Saraya; K. Itou; et al. (ASICON, 2017)

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. - Takuya Hoshii; Kazuyoshi Furukawa; Kuniyuki Kakushima; Masahiro Watanabe; Naoyuki Shigvo; Takuya Saraya; Toshihiko Takakura; Kazuo Itou; Munetoshi Fukui; Shinichi Suzuki; Kiyoshi Takeuchi; Iriya Muneta; et al. (ESSDERC, 2018)

Quarter Video Graphics Array Full-Digital Image Sensing with Wide Dynamic Range and Linear Output Using Pixel-Wise 3D Integration. - Masahide Goto; Yuki Honda; Toshihisa Watabe; Kei Hagiwara; Masakazu Nanba; Yoshinori Iguchi; Takuya Saraya; Masaharu Kobayashi; Eiji Higurashi; Hiroshi Toshiyoshi; Toshiro Hiramoto (ISCAS, 2018)

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. - Kuniyuki Kakushima; Takuya Hoshii; M. Watanabe; N. Shizyo; K. Furukawa; Takuya Saraya; T. Takakura; K. Itou; M. Fukui; S. Suzuki; Ken Takeuchi; Iriya Muneta; et al. (VLSI Circuits, 2018)

Triple-Layering Technology for Pixel-Parallel CMOS Image Sensors Developed by Hybrid Bonding of SOI Wafers. - Masahide Goto; Joeri De Vos; Toshihisa Watabe; Kei Hagiwara; Masakazu Nanba; Yoshinori Iguchi; Eiji Higurashi; Yuki Honda; Takuya Saraya; Masaharu Kobayashi; Hiroshi Toshiyoshi; Toshiro Hiramoto (3DIC, 2019)

Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method. - Fei Mo; Yusaku Tagawa; Takuya Saraya; Toshiro Hiramoto; Masaharu Kobayashi (NVMTS, 2019)

Recent Progress of Double/Dual-Gate Silicon IGBT Technologies. - Toshiro Hiramoto; Takuya Saraya (ASICON, 2021)

3-Layer stacked pixel-parallel CMOS image sensors using hybrid bonding of SOI wafers. - Masahide Goto; Yuki Honda; Masakazu Nanba; Yoshinori Iguchi; Takuya Saraya; Masaharu Kobayashi; Eiji Higurashi; Hiroshi Toshiyoshi; Toshiro Hiramoto (Imaging Sensors and Systems, 2022)

A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices. - Kaito Hikake; Zhuo Li; Junxiang Hao; Chitra Pandy; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi (VLSI Technology and Circuits, 2023)

Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited). - Masaharu Kobayashi; Kaito Hikake; Zhuo Li; Junxiang Hao; Chitra Pandy; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka (IRPS, 2024)

Scaling Potential of Nanosheet Oxide Semiconductor FETs for Monolithic 3D Integration-ALD Material Engineering, High-Field Transport, Statistical Variability. - Kaito Hikake; Xingyu Huang; Sung-Hun Kim; Kota Sakai; Zhuo Li; Tomoko Mizutani; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi (VLSI Technology and Circuits, 2024)

A Study on the Origin of MOSFET Random Telegraph Noise Under Strong Inversion at Cryogenic Temperatures. - Kiyoshi Takeuchi; Tomoko Mizutani; Takuya Saraya; Hiroshi Oka; Takahiro Mori; Shinichi Takagi; Masaharu Kobayashi; Toshiro Hiramoto (IRPS, 2025)