11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology. - Ryuji Yamashita; Sagar Magia; Tsutomu Higuchi; Kazuhide Yoneya; Toshio Yamamura; Hiroyuki Mizukoshi; Shingo Zaitsu; Minoru Yamashita; Shunichi Toyama; Norihiro Kamae; Juan Lee; Shuo Chen; et al. (ISSCC, 2017)

13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs. - Toshiyuki Kouchi; Noriyasu Kumazaki; Masashi Yamaoka; Sanad Bushnaq; Takuyo Kodama; Yuki Ishizaki; Yoko Deguchi; Akio Sugahara; Akihiro Imamoto; Norichika Asaoka; Ryosuke Isomura; Takaya Handa; et al. (ISSCC, 2020)

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. - Tsutomu Higuchi; Takuyo Kodama; Koji Kato; Ryo Fukuda; Naoya Tokiwa; Mitsuhiro Abe; Teruo Takagiwa; Yuki Shimizu; Junji Musha; Katsuaki Sakurai; Jumpei Sato; Tetsuaki Utsumi; et al. (ISSCC, 2021)

A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs. - Toshiyuki Kouchi; Mami Kakoi; Noriyasu Kumazaki; Akio Sugahara; Akihiro Imamoto; Yasufumi Kajiyama; Yuri Terada; Sanad Bushnaq; Naoaki Kanagawa; Takuyo Kodama; Ryo Fukuda; Hiromitsu Komai; et al. (IEEE J. Solid State Circuits, 2021)

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. - Jong Yuh; Jason Li 001; Heguang Li; Yoshihiro Oyama; Cynthia Hsu; Pradeep Anantula; Stanley Jeong; Anirudh Amarnath; Siddhesh Darne; Sneha Bhatia; Tianyu Tang; Aditya Arya; et al. (ISSCC, 2022)

A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface. - Jonghak Yuh; Yen-Lung Jason Li; Heguang Li; Yoshihiro Oyama; Cynthia Hsu; Pradeep Anantula; Gwang Yeong Stanley Jeong; Anirudh Amarnath; Siddhesh Darne; Sneha Bhatia; Tianyu Tang; Aditya Arya; et al. (IEEE J. Solid State Circuits, 2023)