A 130-mm/2, 256-Mbit NAND flash with shallow trench isolation technology. - Kenichi Imamiya; Yoshihisa Sugiura; Hiroshi Nakamura; Toshihiko Himeno; Ken Takeuchi; Tamio Ikehashi; Kazushige Kanda; Koji Hosono; Riichiro Shirota; Seiichi Aritome; Kazuhiro Shimizu; Kazuo Hatakeyama; et al. (IEEE J. Solid State Circuits, 1999)

A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed. - Kenichi Imamiya; Hiroshi Nakamura; Toshihiko Himeno; Toshio Yamamura; Tamio Ikehashi; Ken Takeuchi; Kazushige Kanda; Koji Hosono; Takuya Futatsuyama; Koichi Kawai; Riichiro Shirota; Norihisa Arai; et al. (IEEE J. Solid State Circuits, 2002)

An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation. - Tamio Ikehashi; Takayuki Miyazaki; Hiroaki Yamazaki; Atsushi Suzuki; Etsuji Ogawa; Shinji Miyano; Tomohiro Saito; Tatsuya Ohguro; Takeshi Miyagi; Yoshiaki Sugizaki; Nobuaki Otsuka; Hideki Shibata; et al. (ISSCC, 2008)

The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors. - Yoshihiko Kurui; Hideyuki Tomizawa; Akira Fujimoto; Tomohiro Saito; Akihiro Kojima; Tamio Ikehashi; Yoshiaki Sugizaki; Hideki Shibata (IEEE SENSORS, 2017)

A Capacitance Varying Charge Pump with Exponential Stage-Number Dependence and Its Implementation by MEMS Technology. - Menghan Song; Tamio Ikehashi (IEICE Trans. Electron., 2024)