Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress. - Hideki Hasegawa; Seiya Kasai; Taketomo Sato; Tamotsu Hashizume (IEICE Trans. Electron., 2006)

Integration of interdigital-gated plasma wave device for proximity communication system application. - Abdul Manaf Hashim; Seiya Kasai; Tamotsu Hashizume; Hideki Hasegawa (Microelectron. J., 2007)

Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier. - Abdul Manaf Hashim; Seiya Kasai; Kouichi Iizuka; Tamotsu Hashizume; Hideki Hasegawa (Microelectron. J., 2007)

Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures. - Hong-Quan Zhao; Seiya Kasai; Tamotsu Hashizume; Nan-Jian Wu (IEICE Trans. Electron., 2008)

Multiple-Valued Logic Gates Using Asymmetric Single-Electron Transistors. - Wancheng Zhang; Nan-Jian Wu; Tamotsu Hashizume; Seiya Kasai (ISMVL, 2009)

Foreword. - Tamotsu Hashizume (IEICE Trans. Electron., 2012)

13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT. - Masayuki Okamoto; Toshihiko Tanaka; Koyo Matuzaki; Tamotsu Hashizume; Hiroaki Yamada 003 (IECON, 2014)