Band-gap tunable (GaxIn1-x)2O3 layer grown by magnetron sputtering. - Fabi Zhang; Jinyu Sun; Haiou Li; Juan Zhou; Rong Wang; Tangyou Sun; Tao Fu; Gongli Xiao; Qi Li; Xingpeng Liu; Xiuyun Zhang; Daoyou Guo; et al. (Frontiers Inf. Technol. Electron. Eng., 2021)

The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device. - Zhiqiang Yu; Xu Han; Jiamin Xu; Cheng Chen; Xinru Qu; Baosheng Liu; Zijun Sun; Tangyou Sun (Sensors, 2023)