A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS. - Chihiro Kamidaki; Yuma Okuyama; Tatsuo Kubo; Wooram Lee; Caglar Ozdag; Bodhisatwa Sadhu; Yo Yamaguchi; Ning Guan (IEICE Trans. Electron., 2023)