A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's. - Te-Kuang Chiang (Microelectron. Reliab., 2009)

A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET's. - Te-Kuang Chiang (Microelectron. Reliab., 2009)

A novel scaling theory for fully-depleted omega-gate (ΩG) MOSFETs. - Hong-Wun Gao; Te-Kuang Chiang (ASICON, 2013)

A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET. - Te-Kuang Chiang; Ying-Wen Ko; Hong-Wun Gao; Yeong-Her Wang (ASICON, 2017)

Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate. - Te-Kuang Chiang (Microelectron. J., 2020)