Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution. - Chieh Roger Lo; Teng-Hao Yeh; Wei-Chen Chen; Hang-Ting Lue; Keh-Chung Wang; Chih-Yuan Lu; Yao-Wen Chang; Yung-Hsiang Chen; Chu-Yung Liu (IRPS, 2020)

Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances. - Hang-Ting Lue; Tzu-Hsuan Hsu; Cheng-Lin Sung; Teng-Hao Yeh; Keh-Chung Wang; Chih-Yuan Lu (IMW, 2021)

First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures. - Cheng-Lin Sung; Sheng-Ting Fan; Hang-Ting Lue; Wei-Chen Chen; Pei-Ying Du; Teng-Hao Yeh; Keh-Chung Wang; Chih-Yuan Lu (IRPS, 2022)

Utilizing 2T SONOS Cell Characteristics for L2/Euclidean Distance Computing - From Unit Cell to Array Operations. - Yu-Hsuan Lin; Po-Hao Tseng; Ming-Hsiu Lee; Yu-Yu Lin; Feng-Min Lee; Dai-Ying Lee; Pei-Ying Du; Chih-Chieh Lin; Teng-Hao Yeh; Kuang-Yeu Hsieh; Keh-Chung Wang; Chih-Yuan Lu (IMW, 2025)

A Novel 3D Stacked Vertical-Channel High-Voltage Peripheral Transistor for Largely Scaled the WL Driver Circuit of 1000-layer 3D NAND Flash. - Teng-Hao Yeh; Hang-Ting Lue; Wei-Chen Chen; Keh-Chung Wang; Chih-Yuan Lu (IMW, 2025)