A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of Single Event Transient. - Tengyue Yi; Yi Liu 060; Yintang Yang (J. Electron. Test., 2017)

A 6.4-Gbps 0.41-pJ/b fully-digital die-to-die interconnect PHY for silicon interposer based 2.5D integration. - Yinglin Yang; Yunzhengmao Wang; Tengyue Yi; Chixiao Chen; Qi Liu 010 (Integr., 2024)