Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET. - Miaomiao Wang 006; Zuoguang Liu; Tenko Yamashita; James H. Stathis; Chia-Yu Chen (IRPS, 2015)

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. - Miaomiao Wang 006; Jingyun Zhang; Huimei Zhou; Richard G. Southwick; Robin Hsin Kuo Chao; Xin Miao; Veeraraghavan S. Basker; Tenko Yamashita; Dechao Guo; Gauri Karve; Huiming Bu; James H. Stathis (IRPS, 2019)

Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation. - Robert L. Bruce; Syed Ghazi Sarwat; Irem Boybat; Cheng-Wei Cheng; Wanki Kim; S. R. Nandakumar; Charles Mackin; Timothy Philip; Zuoguang Liu; Kevin Brew; Nanbo Gong; Injo Ok; et al. (IRPS, 2021)

Backside Power Distribution for Nanosheet Technologies Beyond 2nm. - Ruilong Xie; Wonhyuk Hong; Chen Zhang; Jongjin Lee; Kevin Brew; Richard Johnson; Nicholas A. Lanzillo; Hosadurga Shobha; Taesun Kim; Panjae Park; Shogo Mochizuki; Iqbal Saraf; et al. (VLSI Technology and Circuits, 2024)