A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. - Hideaki Kurata; Satoshi Noda; Yoshitaka Sasago; Kazuo Otsuga; Tsuyoshi Arigane; Tetsufumi Kawamura; Takashi Kobayashi 002; Hitoshi Kume; Kazuki Homma; Teruhiko Ito; Yoshinori Sakamoto; Masahiro Shimizu; et al. (IEICE Trans. Electron., 2007)