A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique. - Kazuya Yamamoto; Satoshi Suzuki; Kazutomi Mori; Tomoyuki Asada; Toshio Okuda; Akira Inoue; Takeshi Miura; Kenichiro Chomei; Ryo Hattori; Masahide Yamanouchi; Teruyuki Shimura (IEEE J. Solid State Circuits, 2000)

A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module. - Teruyuki Shimura; Tomoyuki Asada; Satoshi Suzuki; Takeshi Miura; Jun Otsuji; Ryo Hattori; Yukio Miyazaki; Kazuya Yamamoto; Akira Inoue (IEICE Trans. Electron., 2005)

3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology. - Kazuya Yamamoto; Miyo Miyashita; Nobuyuki Ogawa; Takeshi Miura; Teruyuki Shimura (IEICE Trans. Electron., 2007)

A CDMA InGaP/GaAs-HBT MMIC Power Amplifier Module Operating With a Low Reference Voltage of 2.4 V. - Kazuya Yamamoto; Takao Moriwaki; Hiroyuki Otsuka; Nobuyuki Ogawa; Kosei Maemura; Teruyuki Shimura (IEEE J. Solid State Circuits, 2007)

Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response. - Kazuya Yamamoto; Miyo Miyashita; Takayuki Matsuzuka; Tomoyuki Asada; Kazunobu Fujii; Satoshi Suzuki; Teruyuki Shimura; Hiroaki Seki (IEICE Trans. Electron., 2017)