A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. - Hideaki Kurata; Satoshi Noda; Yoshitaka Sasago; Kazuo Otsuga; Tsuyoshi Arigane; Tetsufumi Kawamura; Takashi Kobayashi 002; Hitoshi Kume; Kazuki Homma; Teruhiko Ito; Yoshinori Sakamoto; Masahiro Shimizu; et al. (IEICE Trans. Electron., 2007)

Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories. - Kazuo Otsuga; Hideaki Kurata; Satoshi Noda; Yoshitaka Sasago; Tsuyoshi Arigane; Tetsufumi Kawamura; Takashi Kobayashi 002 (IEICE Trans. Electron., 2007)

Wireless operations for 13.56-MHz band RFID tag using amorphous oxide TFTs. - Hiroaki Ozaki; Tetsufumi Kawamura; Hironori Wakana; Takanori Yamazoe; Hiroyuki Uchiyama (IEICE Electron. Express, 2011)