Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. - Tetsuya Suemitsu; Yoshino K. Fukai; Hiroki Sugiyama; Kazuo Watanabe; Haruki Yokoyama (Microelectron. Reliab., 2002)

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. - Tetsuya Suemitsu; Yoshino K. Fukai; Masami Tokumitsu; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni (IEICE Electron. Express, 2006)

An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets. - Ryohei Urata; Ryo Takahashi; Tetsuya Suemitsu; Hiroyuki Suzuki (IEICE Electron. Express, 2006)

InP HEMT Technology for High-Speed Logic and Communications. - Tetsuya Suemitsu; Masami Tokumitsu (IEICE Trans. Electron., 2007)

Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. - Amine el Moutaouakil; Tsuneyoshi Komori; Kouhei Horiike; Tetsuya Suemitsu; Taiichi Otsuji (IEICE Trans. Electron., 2010)

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. - Tetsuya Kawasaki; Adrian Dobroiu; Takanori Eto; Yuki Kurita; Kazuki Kojima; Yuhei Yabe; Hiroki Sugiyama; Takayuki Watanabe; Susumu Takabayashi; Tetsuya Suemitsu; Victor Ryzhii; Katsumi Iwatsuki; et al. (ESSDERC, 2013)

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. - Tomohiro Yoshida; Kengo Kobayashi; Taiichi Otsuji; Tetsuya Suemitsu (ESSDERC, 2013)

Site-Selective Epitaxy of Graphene on Si Wafers. - Hirokazu Fukidome; Yusuke Kawai; Hiroyuki Handa; Hiroki Hibino; Hidetoshi Miyashita; Masato Kotsugi; Takuo Ohkochi; Myung-Ho Jung; Tetsuya Suemitsu; Toyohiko Kinoshita; Taiichi Otsuji; Maki Suemitsu (Proc. IEEE, 2013)

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. - Myung-Ho Jung; Goon-Ho Park; Tomohiro Yoshida; Hirokazu Fukidome; Tetsuya Suemitsu; Taiichi Otsuji; Maki Suemitsu (Proc. IEEE, 2013)

Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network. - Kenta Sugawara; Tetsuya Kawasaki; Gen Tamamushi; Mastura B. Hussin; Adrian Dobroiu; Tomohiro Yoshida; Tetsuya Suemitsu; Hirokazu Fukidome; Maki Suemitsu; Victor Ryzhii; Katsumi Iwatsuki; Shigeru Kuwano; et al. (ECOC, 2015)

InP and GaN high electron mobility transistors for millimeter-wave applications. - Tetsuya Suemitsu (IEICE Electron. Express, 2015)

Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. - Dai Nakajima; Kazuki Nishimura; Mitsuki Watanabe; Tsung-Tse Lin; Keisuke Kasai; Masato Yoshida; Tetsuya Suemitsu; Taiichi Otsuji; Akira Satou (OFC, 2023)