Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique. - Teruki Ishido; Hisayoshi Matsuo; Takuma Katayama; Tetsuzo Ueda; Kaoru Inoue; Daisuke Ueda (IEICE Electron. Express, 2007)

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide. - Shun Sugiura; Shigeru Kishimoto; Takashi Mizutani; Masayuki Kuroda; Tetsuzo Ueda; Tsuyoshi Tanaka (IEICE Trans. Electron., 2008)

Current status on GaN-based RF-power devices. - Tetsuzo Ueda; Tsuyoshi Tanaka; Daisuke Ueda (ESSCIRC, 2011)

A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices. - Shuichi Nagai; Noboru Negoro; Takeshi Fukuda; Nobuyuki Otsuka; Hiroyuki Sakai 001; Tetsuzo Ueda; Tsuyoshi Tanaka; Daisuke Ueda (ISSCC, 2012)

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. - Noboru Negoro; Masayuki Kuroda; Tomohiro Murata; Masaaki Nishijima; Yoshiharu Anda; Hiroyuki Sakai 001; Tetsuzo Ueda; Tsuyoshi Tanaka (IEICE Trans. Electron., 2012)

Conducted noise of GaN Schottky barrier diode in a DC-DC converter. - Takaaki Ibuchi; Tsuyoshi Funaki; Shinji Ujita; Masahiro Ishida; Tetsuzo Ueda (IEICE Electron. Express, 2015)

A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters. - Shinji Ujita; Yusuke Kinoshita; Hidekazu Umeda; Tatsuo Morita; Kazuhiro Kaibara; Satoshi Tamura; Masahiro Ishida; Tetsuzo Ueda (VLSI Circuits, 2016)

Reliability of Diode-Integrated SiC Power MOSFET(DioMOS). - Osamu Kusumoto; Atsushi Ohoka; Nobuyuki Horikawa; Kohtaro Tanaka; Masahiko Niwayama; Masao Uchida; Yoshihiko Kanzawa; Kazuyuki Sawada; Tetsuzo Ueda (Microelectron. Reliab., 2016)

Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations. - Ayanori Ikoshi; Masahiro Toki; Hiroto Yamagiwa; Daijiro Arisawa; Masahiro Hikita; Kazuki Suzuki; Manabu Yanagihara; Yasuhiro Uemoto; Kenichiro Tanaka; Tetsuzo Ueda (IRPS, 2018)

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. - Eric E. Fabris; Matteo Meneghini; Carlo De Santi; Matteo Borga; Gaudenzio Meneghesso; Enrico Zanoni; Y. Kinoshita; Kenichiro Tanaka; H. Ishida; Tetsuzo Ueda (IRPS, 2019)

Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT). - Kenichiro Tanaka; Masahiro Hikita; Tetsuzo Ueda (IRPS, 2019)