Observation and characterization of defects in HfO2 high-K gate dielectric layers. - Vidya Kaushik; Martine Claes; Annelies Delabie; Sven Van Elshocht; Olivier Richard; Thierry Conard; Erika Rohr; Thomas Witters; Matty Caymax; Stefan De Gendt (Microelectron. Reliab., 2005)

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. - Z. Li; Tom Schram; Luigi Pantisano; A. Stesmans; Thierry Conard; S. Shamuilia; V. V. Afanasiev; A. Akheyar; Sven Van Elshocht; D. P. Brunco; W. Deweerd; Y. Naoki; et al. (Microelectron. Reliab., 2007)

Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors. - A. Rothschild; R. Mitsuhashi; Christoph Kerner; X. Shi; J. L. Everaert; L. Date; Thierry Conard; Olivier Richard; C. Vrancken; R. Verbeeck; Anabela Veloso; A. Lauwers; et al. (Microelectron. Reliab., 2007)