On the temperature dependence of NBTI recovery. - Thomas Aichinger; Michael Nelhiebel; Tibor Grasser (Microelectron. Reliab., 2008)

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. - Gregor Pobegen; Thomas Aichinger; Tibor Grasser; Michael Nelhiebel (Microelectron. Reliab., 2011)

Case study on multiple fault dependability and security evaluations. - Johannes Grinschgl; Armin Krieg; Christian Steger; Reinhold Weiss; Holger Bock; Josef Haid; Thomas Aichinger; Christiane Ulbricht (Microprocess. Microsystems, 2013)

Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. - Thomas Aichinger; Michael Nelhiebel; Tibor Grasser (Microelectron. Reliab., 2013)

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. - Katja Puschkarsky; Tibor Grasser; Thomas Aichinger; Wolfgang Gustin; Hans Reisinger (IRPS, 2018)

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. - Thomas Aichinger; Gerald Rescher; Gregor Pobegen (Microelectron. Reliab., 2018)

Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. - Thomas Aichinger; Matthias Schmidt (IRPS, 2020)

Similarities and Differences of BTI in SiC and Si Power MOSFETs. - Judith Berens; Magdalena Weger; Gregor Pobegen; Thomas Aichinger; Gerald Rescher; Christian Schleich; Tibor Grasser (IRPS, 2020)

Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. - Sebastian Maaß; Hans Reisinger; Thomas Aichinger; Gerald Rescher (IRPS, 2020)

A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs. - Judith Berens; Thomas Aichinger (IRPS, 2021)

A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. - Paul Salmen; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Gerald Rescher; Thomas Aichinger (IRPS, 2021)

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. - Maximilian W. Feil; Hans Reisinger; André Kabakow; Thomas Aichinger; Wolfgang Gustin; Tibor Grasser (IRPS, 2022)

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. - Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Paul Salmen; Gerald Rescher; Wolfgang Gustin; Tibor Grasser (IRPS, 2023)

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. - Tibor Grasser; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Dominic Waldhör; A. Vasilev; Michael Waltl; Thomas Aichinger; M. Bockstedte; Wolfgang Gustin; Gregor Pobegen (IRPS, 2024)