Surge current capability of IGBTs. - Thomas Basler; Josef Lutz; Roland Jakob; Thomas Bruckner (SSD, 2012)

Mechanical analysis of press-pack IGBTs. - Tilo Poller; Thomas Basler; Magnar Hernes; Salvatore D'Arco; Josef Lutz (Microelectron. Reliab., 2012)

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept. - Thomas Basler; M. Pfaffenlehner; Hans Peter Felsl; Franz-Josef Niedernostheide; F. Pfirsch; Hans-Joachim Schulze; Roman Baburske; Josef Lutz (IET Circuits Devices Syst., 2014)

Ruggedness of 1200 V SiC MPS diodes. - Susanne Fichtner; Sophia Frankeser; Josef Lutz; Roland Rupp; Thomas Basler; Rolf Gerlach (Microelectron. Reliab., 2015)

Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. - Shanmuganathan Palanisamy; Josef Lutz; Roman Boldyrjew-Mast; Thomas Basler (IRPS, 2020)

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density. - Shanmuganathan Palanisamy; Thomas Basler; Josef Lutz; Cesare Künzel; Larissa Wehrhahn-Kilian; Rudolf Elpelt (IRPS, 2021)

SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation. - Christian Schwabe; Xing Liu; Tobias N. Wassermann; Paul Salmen; Thomas Basler (IRPS, 2023)

Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETs. - Roman Boldyrjew-Mast; Clemens Herrmann; Xing Liu; Xupeng Li; Thomas Basler (IRPS, 2025)