Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions. - Thomas Detzel; Michael Glavanovics; Karin Weber (Microelectron. Reliab., 2004)

Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide. - Michael Nelhiebel; J. Wissenwasser; Thomas Detzel; A. Timmerer; E. Bertagnolli (Microelectron. Reliab., 2005)

Microscopic stress simulation of non-planar chip technologies. - Javad Zarbakhsh; Balamurugan Karunamurthy; Carlos O. Trejo-Caballero; Endre Barti; Thomas Detzel (Microelectron. Reliab., 2010)

Effective and reliable heat management for power devices exposed to cyclic short overload pulses. - Michael Nelhiebel; Robert Illing; Thomas Detzel; S. Wöhlert; B. Auer; S. Lanzerstorfer; M. Rogalli; W. Robl; Stefan Decker; J. Fugger; Markus Ladurner (Microelectron. Reliab., 2013)

GaN virtual prototyping: From traps modeling to system-level cascode optimization. - Gilberto Curatola; Andreas Kassmanhuber; Sergey Yuferev; Jörg Franke; Gianmauro Pozzovivo; Simone Lavanga; Gerhard Prechtl; Thomas Detzel; Oliver Haeberlen (ESSDERC, 2014)