Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. - Michael Graef; Thomas Holtij; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2013)

Unified charge model for short-channel junctionless double gate MOSFETs. - Thomas Holtij; Michael Graef; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2013)

3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. - Thomas Holtij; Michael Graef; Alexander Kloes; Benjamín Iñíguez (ESSDERC, 2014)

Improved analytical potential modeling in double-gate tunnel-FETs. - Michael Graef; Thomas Holtij; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2014)

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. - Michael Graef; Thomas Holtij; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (Microelectron. J., 2014)

Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. - Thomas Holtij; Michael Graef; Alexander Kloes; Benjamín Iñíguez (Microelectron. J., 2014)