Reliability of thin ZrO2 gate dielectric layers. - Robert O'Connor; Greg Hughes; Thomas Kauerauf; Lars-Åke Ragnarsson (Microelectron. Reliab., 2011)

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. - Jacopo Franco; Ben Kaczer; Jérôme Mitard; Maria Toledano-Luque; Felice Crupi; Geert Eneman; Ph. J. Rousse; Tibor Grasser; M. Cho; Thomas Kauerauf; Liesbeth Witters; Geert Hellings; et al. (ICICDT, 2012)

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. - Marc Aoulaiche; Eddy Simoen; Romain Ritzenthaler; Tom Schram; Hiroaki Arimura; Moonju Cho; Thomas Kauerauf; Guido Groeseneken; Naoto Horiguchi; Aaron Thean; Antonio Federico; Felice Crupi; et al. (ESSDERC, 2013)

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability. - Baojun Tang; Kris Croes; Yohan Barbarin; Yunqi Wang; Robin Degraeve; Yunlong Li; Maria Toledano-Luque; Thomas Kauerauf; Jürgen Bömmels; Zsolt Tökei; Ingrid De Wolf (Microelectron. Reliab., 2014)

Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area. - Maria Toledano-Luque; Peter C. Paliwoda; Mohamed Nour; Thomas Kauerauf; Byoung Min; Germain Bossu; Mahesh Siddabathula; Tanya Nigam (IRPS, 2021)