A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM). - Glen Rosendale; Sohrab Kianian; Monte Manning; Darlene Hamilton; Henry Huang; Karl Robinson; Young Weon Kim; Thomas Rueckes (ESSCIRC, 2010)

Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory. - Sheyang Ning; Tomoko Ogura Iwasaki; Shuhei Tanakamaru; Darlene Viviani; Henry Huang; Monte Manning; Thomas Rueckes; Ken Takeuchi (IEEE J. Solid State Circuits, 2016)

NRAM status and prospects. - David C. Gilmer; Thomas Rueckes; Lee Cleveland; Darlene Viviani (ICICDT, 2017)

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. - Dmitry Veksler; Gennadi Bersuker; Adam W. Bushmaker; Maribeth Mason; P. R. Shrestha; Kin P. Cheung; Jason P. Campbell; Thomas Rueckes; Lee Cleveland; Harry Luan; David C. Gilmer (IRPS, 2020)

Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed. - Hitoshi Saito; Jun'ichi Watanabe; J. Seino; Tetsuro Tamura; Naoya Sashida; Kota Hara; Kuninori Kawabata; Atsushi Fujii; Jun Ohno; Atsushi Nakakubo; Manabu Kojima; T. Shimoyama; et al. (IMW, 2021)

Mitigating switching variability in carbon nanotube memristors. - James Farmer; William Whitehead; Andrew Hall; Dmitry Veksler; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; et al. (IRPS, 2021)

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. - James Farmer; Dmitry Veksler; E. Tang; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; Rahul Sen (IRPS, 2022)