Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs. - Bhagyalakshmi Kakarla; Selamnesh Nida; Johanna Mueting; Thomas Ziemann; Ivana Kovacevic-Badstuebner; Ulrike Grossner (Microelectron. Reliab., 2017)

Accuracy of Thermal Analysis for SiC Power Devices. - Salvatore Race; Thomas Ziemann; Shweta Tiwari; Ivana Kovacevic-Badstuebner; Ulrike Grossner (IRPS, 2021)

Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages. - Ivana Kovacevic-Badstuebner; Salvatore Race; Thomas Ziemann; Shweta Tiwari; Ulrike Grossner; Elena Mengotti; Enea Bianda; Joni P. A. Jormanainen (IRPS, 2022)