A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability. - Sheng-Kai Fan; Shen-Li Chen; Po-Lin Lin; Shi-Zhe Hong; Tien-Yu Lan; Yu-Jie Zhou (ICCE-TW, 2020)

ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI. - Tien-Yu Lan; Shen-Li Chen; Sheng-Kai Fan; Po-Lin Lin; Yu-Jie Zhou; Shi-Zhe Hong; Hung-Wei Chen (ICCE-TW, 2020)

Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode. - Po-Lin Lin; Shen-Li Chen; Sheng-Kai Fan; Tien-Yu Lan; Yu-Jie Zhou; Shi-Zhe Hong (ICCE-TW, 2020)

Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices. - Shi-Zhe Hong; Shen-Li Chen; Sheng-Kai Fan; Po-Lin Lin; Tien-Yu Lan; Yu-Jie Zhou (ICKII, 2020)

ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient. - Tien-Yu Lan; Shen-Li Chen; Po-Lin Lin; Sheng-Kai Fan; Yu-Jie Zhou; Shi-Zhe Hong; Hung-Wei Chen (ICKII, 2020)

ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by the DPW Discrete Layer. - Yu-Jie Zhou; Shen-Li Chen; Pei-Lin Wu; Po-Lin Lin; Sheng-Kai Fan; Tien-Yu Lan; Shi-Zhe Hong (ICKII, 2020)

ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations. - Shi-Zhe Hong; Shen-Li Chen; Tien-Yu Lan; Yu-Jie Zhou; Zhi-Wei Liu; Jhong-Yi Lai (ICCE-TW, 2021)

Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering. - Tien-Yu Lan; Shen-Li Chen; Yu-Jie Zhou; Shi-Zhe Hong; Jhong-Yi Lai; Zhi-Wei Liu (ICCE-TW, 2021)

Improved UHV IGBT-Cell for ESD Protection with High Holding Voltage via a 0.5µm BCD Process. - Yu-Jie Zhou; Shen-Li Chen; Tien-Yu Lan; Shi-Zhe Hong; Zhi-Wei Liu; Zhong-Yi Lai (ICCE-TW, 2021)