Dopant-free CMOS: A new device concept. - Frank Wessely; Tillmann Krauss; Udo Schwalke (DTIS, 2012)

Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material. - Udo Schwalke; Frank Wessely; Tillmann Krauss (IDT, 2013)

Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs. - Frank Wessely; Tillmann Krauss; Udo Schwalke (Microelectron. J., 2013)

An electrostatically doped planar device concept. - Tillmann Krauss; Frank Wessely; Udo Schwalke (DTIS, 2014)

Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. - Tillmann Krauss; Frank Wessely; Udo Schwalke (SSD, 2016)

Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. - Tillmann Krauss; Frank Wessely; Udo Schwalke (DTIS, 2017)

Simulation framework for barrier lowering in Schottky barrier MOSFETs. - Mike Schwarz; John P. Snyder; Tillmann Krauss; Udo Schwalke; Laurie E. Calvet; Alexander Kloes (MIXDES, 2017)

Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS. - Tillmann Krauss; Frank Wessely; Udo Schwalke (DTIS, 2018)

Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. - Mike Schwarz; Laurie E. Calvet; John P. Snyder; Tillmann Krauss; Udo Schwalke; Alexander Kloes (MIXDES, 2018)

From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI. - Maximilian Reuter; Tillmann A. Krauss; Mahdi Moradinasab; Johannes Pfau; Udo Schwalke; Jürgen Becker 001; Klaus Hofmann (APCCAS, 2019)

Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications. - Maximilian Reuter; Johannes Pfau; Tillmann A. Krauss; Mahdi Moradinasab; Udo Schwalke; Jürgen Becker 001; Klaus Hofmann (LASCAS, 2020)

From MOSFETs to Ambipolar Transistors: Standard Cell Synthesis for the Planar RFET Technology. - Maximilian Reuter; Johannes Pfau; Tillmann A. Krauss; Jürgen Becker 001; Klaus Hofmann (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)