Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Tobias Kemmer; Helmer Konstanzer; Andreas Graff; Michél Simon-Najasek; Rüdiger Quay (Microelectron. Reliab., 2018)

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. - Tobias Kemmer; Michael Dammann; Martina Baeumler; Vladimir Polyakov; Peter Brückner; Helmer Konstanzer; Rüdiger Quay; Oliver Ambacher (IRPS, 2020)

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. - Maximilian Dammann; Martina Baeumler; Tobias Kemmer; Helmer Konstanzer; Peter Brückner; Sebastian Krause; Andreas Graff; Michél Simon-Najasek (IRPS, 2021)