A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison. - Todd McKenzie; Yiming Li 005 (Int. J. Comput. Sci. Eng., 2006)

Preface. - Yiming Li 005; Juncheng Cao; Pavel Dyshlovenko; Tatsuya Ezaki; Tor A. Fjeldly; Hans Kosina; Todd McKenzie; Hiroshi Mizuta; Laurence Tianruo Yang (Math. Comput. Simul., 2008)

Preface. - Yiming Li 005; Pavel Dyshlovenko; Tatsuya Ezaki; Tor A. Fjeldly; Hans Kosina; Todd McKenzie; Mincheol Shin; Laurence Tianruo Yang; Shao-Ming Yu (Math. Comput. Model., 2010)

Preface. - Yiming Li 005; Chun-Nan Chen; Yoshinari Kamakura; Todd McKenzie; Mincheol Shin; Laurence T. Yang; Shao-Ming Yu (Math. Comput. Model., 2013)