Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation. - E. M. Bazizi; Alban Zaka; Tom Herrmann; Francis Benistant; J. H. M. Tin; J. P. Goh; L. Jiang; M. Joshi; H. van Meer; K. Korablev (ESSDERC, 2014)

Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. - Mingcheng Chang; Nigel Chan; Vivek Joshi; Sandra Hecker; Udo Ziller; Petra Poth; Alban Zaka; Tom Herrmann; Seunghwan Seo; Hongsik Yoon; Xin Zou; Zhen Xu; et al. (ESSDERC, 2018)

22FDX® fMAX Optimization through Parasitics Reduction and GM Boost. - Zhixing Zhao; Patrick James Artz; Klaus Hempel; Juergen Faul; Tianbing Chen; Richard Taylor; Jerome Mazurier; Carsten Grass; Jan Hoentschel; David Harame; Steffen Lehmann; Luca Lucci; et al. (ESSDERC, 2019)

Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology. - Kyong Jin Hwang; Sagar Premnath Karalkar; Vishal Ganesan; Sevashanmugam Marimuthu; Alban Zaka; Tom Herrmann; Bhoopendra Singh; Robert Gauthier 002 (IRPS, 2020)