A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. - Raul Cernea; Long Pham; Farookh Moogat; Siu Lung Chan; Binh Le; Yan Li; Shouchang Tsao; Taiyuan Tseng; Khanh Nguyen; Jason Li 001; Jayson Hu; Jong Park; et al. (ISSCC, 2008)

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology. - Raul Cernea; Long Pham; Farookh Moogat; Siu Lung Chan; Binh Le; Yan Li; Shouchang Tsao; Taiyuan Tseng; Khanh Nguyen; Jason Li 001; Jayson Hu; Jonghak Yuh; et al. (IEEE J. Solid State Circuits, 2009)

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. - Jong Yuh; Jason Li 001; Heguang Li; Yoshihiro Oyama; Cynthia Hsu; Pradeep Anantula; Stanley Jeong; Anirudh Amarnath; Siddhesh Darne; Sneha Bhatia; Tianyu Tang; Aditya Arya; et al. (ISSCC, 2022)

A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface. - Jonghak Yuh; Yen-Lung Jason Li; Heguang Li; Yoshihiro Oyama; Cynthia Hsu; Pradeep Anantula; Gwang Yeong Stanley Jeong; Anirudh Amarnath; Siddhesh Darne; Sneha Bhatia; Tianyu Tang; Aditya Arya; et al. (IEEE J. Solid State Circuits, 2023)