UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems. - Yoshiyuki Kurokawa; Takayuki Ikeda; Masami Endo; Hiroki Dembo; Daisuke Kawae; Takayuki Inoue; Munehiro Kozuma; Daisuke Ohgarane; Satoru Saito; Koji Dairiki; Hidekazu Takahashi; Yutaka Shionoiri; et al. (IEEE J. Solid State Circuits, 2008)

Processor with 4.9-μs break-even time in power gating using crystalline In-Ga-Zn-oxide transistor. - Hidetomo Kobayashi; Kiyoshi Kato; Takuro Ohmaru; Seiichi Yoneda; Tatsuji Nishijima; Shuhei Maeda; Kazuaki Ohshima; Hikaru Tamura; Hiroyuki Tomatsu; Tomoaki Atsumi; Yutaka Shionoiri; Yukio Maehashi; et al. (COOL Chips, 2013)

Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating. - Hikaru Tamura; Kiyoshi Kato; Takahiko Ishizu; Tatsuya Onuki; Wataru Uesugi; Takuro Ohmaru; Kazuaki Ohshima; Hidetomo Kobayashi; Seiichi Yoneda; Atsuo Isobe; Naoaki Tsutsui; Suguru Hondo; et al. (COOL Chips, 2014)

A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor. - Atsuo Isobe; Hikaru Tamura; Kiyoshi Kato; Takuro Ohmaru; Wataru Uesugi; Takahiko Ishizu; Tatsuya Onuki; Kazuaki Ohshima; Takanori Matsuzaki; Atsushi Hirose; Yasutaka Suzuki; Naoaki Tsutsui; et al. (VLSIC, 2014)

16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method. - Takanori Matsuzaki; Tatsuya Onuki; Shuhei Nagatsuka; Hiroki Inoue; Takahiko Ishizu; Yoshinori Ieda; Naoto Yamade; Hidekazu Miyairi; Masayuki Sakakura; Tomoaki Atsumi; Yutaka Shionoiri; Kiyoshi Kato; et al. (ISSCC, 2015)

A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors. - Shuhei Maeda; Satoru Ohshita; Kazuma Furutani; Yuto Yakubo; Takahiko Ishizu; Tomoaki Atsumi; Yoshinori Ando; Daisuke Matsubayashi; Kiyoshi Kato; Takashi Okuda; Masahiro Fujita; Shunpei Yamazaki (ISSCC, 2018)

A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs. - Takahiko Ishizu; Yuto Yakubo; Kazuma Furutani; Atsuo Isobe; Masashi Fujita; Tomoaki Atsumi; Yoshinori Ando; Tsutomu Murakawa; Kiyoshi Kato; Masahiro Fujita; Shunpei Yamazaki (VLSI Circuits, 2019)