An 0.8-μm high-voltage IC using a newly designed 600-V lateral p-channel dual-action device on SOI. - Kiyoto Watabe; Hajime Akiyama; Tomohide Terashima; Masakazu Okada; Shinji Nobuto; Masao Yamawaki; Sotoju Asa (IEEE J. Solid State Circuits, 1998)