Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. - Tomohisa Miyao; Takahisa Tanaka; Itsuki Imanishi; Masayuki Ichikawa; Shuya Nakagawa; Hiroki Ishikuro; Toshitsugu Sakamoto; Munehiro Tada; Ken Uchida (DRC, 2022)