A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput. - Wataru Otsuka; Koji Miyata; Makoto Kitagawa; Keiichi Tsutsui; Tomohito Tsushima; Hiroshi Yoshihara; Tomohiro Namise; Yasuhiro Terao; Kentaro Ogata (ISSCC, 2011)

19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology. - Rich Fackenthal; Makoto Kitagawa; Wataru Otsuka; Kirk Prall; Duane Mills; Keiichi Tsutsui; Johnny Javanifard; Kerry Tedrow; Tomohito Tsushima; Yoshiyuki Shibahara; Glen Hush (ISSCC, 2014)