Destruction failure analysis and international reliability test standard for power devices. - Takashi Setoya; Tsuneo Ogura; Wataru Saito; Tomoko Matsudai; Koichi Endo (Microelectron. Reliab., 2015)

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). - Kazuo Tsutsui; Kuniyuki Kakushima; Takuya Hoshii; A. Nakajima; Shinichi Nishizawa; Hitoshi Wakabayashi; Iriya Muneta; K. Sato; Tomoko Matsudai; Wataru Saito; Takuya Saraya; K. Itou; et al. (ASICON, 2017)

Switching of 3300V Scaled IGBT by 5V Gate Drive. - Toshiro Hiramoto; Katsumi Satoh; Tomoko Matsudai; Wataru Saito; Kuniyuki Kakushima; Takuya Hoshii; Kazuyoshi Furukawa; Masahiro Watanabe; Naoyuki Shigyo; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; et al. (ASICON, 2019)