High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. - Jiaqi Liu; Yuanfu Zhao; Liang Wang 024; Dan Wang; Hongchao Zheng; Maoxin Chen; Lei Shu 001; Tongde Li; Dongqiang Li; Wei Guo (Sci. China Inf. Sci., 2017)

A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application. - Yan Li 084; Xu Cheng 002; Chiyu Tan; Jun Han 003; Yuanfu Zhao; Liang Wang 024; Tongde Li; Mehdi B. Tahoori; Xiaoyang Zeng (IEEE Trans. Circuits Syst. II Express Briefs, 2020)

Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology. - Yuanyuan Han; Tongde Li; Xu Cheng 002; Liang Wang 024; Jun Han 003; Yuanfu Zhao; Xiaoyang Zeng (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

Exploring human and AI collaboration in inclusive STEM teacher training: A synergistic approach based on self-determination theory. - Tingting Li; Zehui Zhan; Yu Ji; Tongde Li (Internet High. Educ., 2025)

Evaluation of space radiation effects on FinFET oxide layer with Geant4 simulation. - Jianyu Zhang; Yang Hua; Sichong Huang; Tongde Li; Liang Wang; Xing Zhang; Yuanfu Zhao (Microelectron. J., 2025)