Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode. - Atsushi Kato; Toru Kanazawa; Shunsuke Ikeda; Yoshiharu Yonai; Yasuyuki Miyamoto (IEICE Trans. Electron., 2012)

Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density. - Kazuto Ohsawa; Atsushi Kato; Toru Kanazawa; Eiji Uehara; Yasuyuki Miyamoto (IEICE Electron. Express, 2014)

Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation. - Vikrant Upadhyaya; Toru Kanazawa; Yasuyuki Miyamoto (IEICE Trans. Electron., 2017)

Type-II HfS2/MoS2 Heterojunction Transistors. - Seiko Netsu; Toru Kanazawa; Teerayut Uwanno; Tomohiro Amemiya; Kosuke Nagashio; Yasuyuki Miyamoto (IEICE Trans. Electron., 2018)