Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. - Masanori Natsui; Akira Tamakoshi; Hiroaki Honjo; Toshinari Watanabe; Takashi Nasuno; Chaoliang Zhang; Takaho Tanigawa; Hirofumi Inoue; Masaaki Niwa; Toru Yoshiduka; Yasuo Noguchi; Mitsuo Yasuhira; et al. (VLSI Circuits, 2020)

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition. - Masanori Natsui; Akira Tamakoshi; Hiroaki Honjo; Toshinari Watanabe; Takashi Nasuno; Chaoliang Zhang; Takaho Tanigawa; Hirofumi Inoue; Masaaki Niwa; Toru Yoshiduka; Yasuo Noguchi; Mitsuo Yasuhira; et al. (IEEE J. Solid State Circuits, 2021)